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BU111 NPN Transistor

The BU111 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU111 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU111 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU111 transistor as follows.

Circuit diagram symbol of the BU111 transistor

BU111 Transistor Specification

Transistor Code BU111
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 5
Transition Frequency FT 10MHz

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