BU109DP NPN Transistor

The BU109DP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU109DP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU109DP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU109DP transistor as follows.

BU109DP Transistor Specification

Transistor Code		BU109DP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	330V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		7
Transition Frequency	FT	10MHz

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