BU104DP NPN Transistor

The BU104DP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU104DP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU104DP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU104DP transistor as follows.

BU104DP Transistor Specification

Transistor Code		BU104DP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		7
Transition Frequency	FT	10MHz

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