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BU102S NPN Transistor

The BU102S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU102S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU102S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU102S transistor as follows.

Circuit diagram symbol of the BU102S transistor

BU102S Transistor Specification

Transistor Code BU102S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92T
Collector Power Dissipation (Maximum) PC 0.8W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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More Transistors Datasheets in TO92T Package

13001-0 13001-0 NPN Transistor 13001-2 13001-2 NPN Transistor 13001-A 13001-A NPN Transistor