BU1008AF NPN Transistor

The BU1008AF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU1008AF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU1008AF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU1008AF transistor as follows.

BU1008AF Transistor Specification

Transistor Code		BU1008AF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	50W
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		4

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