BU1008ADF NPN Transistor

The BU1008ADF is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BU1008ADF transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BU1008ADF transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BU1008ADF transistor as follows.

BU1008ADF Transistor Specification

Transistor Code		BU1008ADF
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	50W
Collector-Emitter Voltage (Maximum)	VCE	700V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		4

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