BTNH10N3 NPN Transistor

The BTNH10N3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTNH10N3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTNH10N3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTNH10N3 transistor as follows.

BTNH10N3 Transistor Specification

Transistor Code		BTNH10N3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		3E
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		52
Transition Frequency	FT	650MHz
Collector Capacitance	CC	0.7pF

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