BTN1101E3 NPN Transistor

The BTN1101E3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTN1101E3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTN1101E3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTN1101E3 transistor as follows.

BTN1101E3 Transistor Specification

Transistor Code		BTN1101E3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220AB
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	50MHz
Collector Capacitance	CC	130pF

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