BTD965LA3 NPN Transistor

The BTD965LA3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD965LA3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD965LA3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD965LA3 transistor as follows.

BTD965LA3 Transistor Specification

Transistor Code		BTD965LA3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.75W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		390
Transition Frequency	FT	170MHz
Collector Capacitance	CC	25pF

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