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BTD965LA3 NPN Transistor

The BTD965LA3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD965LA3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD965LA3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD965LA3 transistor as follows.

Circuit diagram symbol of the BTD965LA3 transistor

BTD965LA3 Transistor Specification

Transistor Code BTD965LA3
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 390
Transition Frequency FT 170MHz
Collector Capacitance CC 25pF

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