BTD965A3 NPN Transistor

The BTD965A3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD965A3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD965A3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD965A3 transistor as follows.

BTD965A3 Transistor Specification

Transistor Code		BTD965A3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.75W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	150MHz
Collector Capacitance	CC	50pF

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