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BTD5213J3 NPN Transistor

The BTD5213J3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD5213J3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD5213J3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD5213J3 transistor as follows.

Circuit diagram symbol of the BTD5213J3 transistor

BTD5213J3 Transistor Specification

Transistor Code BTD5213J3
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-252
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 160
Transition Frequency FT 100MHz
Collector Capacitance CC 20pF

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