BTD1980J3 NPN Transistor

The BTD1980J3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD1980J3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD1980J3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD1980J3 transistor as follows.

BTD1980J3 Transistor Specification

Transistor Code		BTD1980J3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-252
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	130V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		500
Collector Capacitance	CC	200pF

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