BTD1816I3 NPN Transistor

The BTD1816I3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD1816I3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD1816I3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD1816I3 transistor as follows.

BTD1816I3 Transistor Specification

Transistor Code		BTD1816I3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Transistor SMD Code		D1816
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	180MHz
Collector Capacitance	CC	40pF

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