BTD1664M3 NPN Transistor

The BTD1664M3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD1664M3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD1664M3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD1664M3 transistor as follows.

BTD1664M3 Transistor Specification

Transistor Code		BTD1664M3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		BS
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	42V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	150MHz
Collector Capacitance	CC	15pF

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