BTD1616AM3 NPN Transistor

The BTD1616AM3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD1616AM3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD1616AM3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD1616AM3 transistor as follows.

BTD1616AM3 Transistor Specification

Transistor Code		BTD1616AM3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		DG
Collector Power Dissipation (Maximum)	PC	2.1W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	11pF

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