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BTB826M3 PNP Transistor

The BTB826M3 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BTB826M3 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTB826M3 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BTB826M3 transistor as follows.

Circuit diagram symbol of the BTB826M3 transistor

BTB826M3 Transistor Specification

Transistor Code BTB826M3
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT89
Transistor SMD Code AE
Collector Power Dissipation (Maximum) PC 2W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 180
Transition Frequency FT 180MHz
Collector Capacitance CC 20pF

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