BTB826M3 PNP Transistor

The BTB826M3 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BTB826M3 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTB826M3 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BTB826M3 transistor as follows.

BTB826M3 Transistor Specification

Transistor Code		BTB826M3
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		AE
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	180MHz
Collector Capacitance	CC	20pF

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