BSY55 NPN Transistor

The BSY55 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BSY55 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSY55 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BSY55 transistor as follows.

BSY55 Transistor Specification

Transistor Code		BSY55
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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