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BSV63 NPN Transistor

The BSV63 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BSV63 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV63 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BSV63 transistor as follows.

Circuit diagram symbol of the BSV63 transistor

BSV63 Transistor Specification

Transistor Code BSV63
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.08W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.005A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 400MHz
Collector Capacitance CC 4pF

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