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BSV61 NPN Transistor

The BSV61 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BSV61 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV61 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BSV61 transistor as follows.

Circuit diagram symbol of the BSV61 transistor

BSV61 Transistor Specification

Transistor Code BSV61
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.08W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 5V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 500MHz
Collector Capacitance CC 4pF

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