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BSV55P PNP Transistor

The BSV55P is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BSV55P transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV55P transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BSV55P transistor as follows.

Circuit diagram symbol of the BSV55P transistor

BSV55P Transistor Specification

Transistor Code BSV55P
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Collector Capacitance CC 4.5pF

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