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BSV55AP PNP Transistor

The BSV55AP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BSV55AP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV55AP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BSV55AP transistor as follows.

Circuit diagram symbol of the BSV55AP transistor

BSV55AP Transistor Specification

Transistor Code BSV55AP
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 12V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 30
Collector Capacitance CC 6pF

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