BSV52LT1G NPN Transistor

The BSV52LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BSV52LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV52LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BSV52LT1G transistor as follows.

BSV52LT1G Transistor Specification

Transistor Code		BSV52LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		B2
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	400MHz
Collector Capacitance	CC	4pF

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