BSV50E PNP Transistor

The BSV50E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BSV50E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV50E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BSV50E transistor as follows.

BSV50E Transistor Specification

Transistor Code		BSV50E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	12V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	400MHz
Collector Capacitance	CC	5pF

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