BSV25M NPN Transistor

The BSV25M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BSV25M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV25M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BSV25M transistor as follows.

BSV25M Transistor Specification

Transistor Code		BSV25M
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	400MHz
Collector Capacitance	CC	4pF

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