BSV12-10 PNP Transistor

The BSV12-10 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BSV12-10 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV12-10 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BSV12-10 transistor as follows.

BSV12-10 Transistor Specification

Transistor Code		BSV12-10
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	5W
Collector-Base Voltage (Maximum)	VCB	90V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		63
Transition Frequency	FT	50MHz
Collector Capacitance	CC	30pF

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