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BSV12-10 PNP Transistor

The BSV12-10 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BSV12-10 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BSV12-10 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BSV12-10 transistor as follows.

Circuit diagram symbol of the BSV12-10 transistor

BSV12-10 Transistor Specification

Transistor Code BSV12-10
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO39
Collector Power Dissipation (Maximum) PC 5W
Collector-Base Voltage (Maximum) VCB 90V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 63
Transition Frequency FT 50MHz
Collector Capacitance CC 30pF

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