BR3DD5555R NPN Transistor

The BR3DD5555R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BR3DD5555R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BR3DD5555R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BR3DD5555R transistor as follows.

BR3DD5555R Transistor Specification

Transistor Code		BR3DD5555R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Transistor SMD Code		BR5555
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	1050V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	14V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	5MHz
Collector Capacitance	CC	45pF

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