BR3DD13009X8F NPN Transistor

The BR3DD13009X8F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BR3DD13009X8F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BR3DD13009X8F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BR3DD13009X8F transistor as follows.

BR3DD13009X8F Transistor Specification

Transistor Code		BR3DD13009X8F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220F
Transistor SMD Code		BR13009
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	5MHz

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