BR3DD13007V9P NPN Transistor

The BR3DD13007V9P is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BR3DD13007V9P transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BR3DD13007V9P transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BR3DD13007V9P transistor as follows.

BR3DD13007V9P Transistor Specification

Transistor Code		BR3DD13007V9P
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3P
Transistor SMD Code		BR13007
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	8MHz

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