BR3DD13002DG1K NPN Transistor

The BR3DD13002DG1K is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BR3DD13002DG1K transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BR3DD13002DG1K transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BR3DD13002DG1K transistor as follows.

BR3DD13002DG1K Transistor Specification

Transistor Code		BR3DD13002DG1K
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Transistor SMD Code		BR13002D
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	1.3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	5MHz

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