BLY53AP NPN Transistor

The BLY53AP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLY53AP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLY53AP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLY53AP transistor as follows.

BLY53AP Transistor Specification

Transistor Code		BLY53AP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M122
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	600MHz

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