BLX65ES NPN Transistor

The BLX65ES is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLX65ES transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLX65ES transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLX65ES transistor as follows.

BLX65ES Transistor Specification

Transistor Code		BLX65ES
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	3W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	16V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	1400MHz
Collector Capacitance	CC	6.5pF

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