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BLV33F NPN Transistor

The BLV33F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLV33F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLV33F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLV33F transistor as follows.

Circuit diagram symbol of the BLV33F transistor

BLV33F Transistor Specification

Transistor Code BLV33F
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package XM5
Collector Power Dissipation (Maximum) PC 132W
Collector-Base Voltage (Maximum) VCB 65V
Collector-Emitter Voltage (Maximum) VCE 33V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 700MHz
Collector Capacitance CC 150pF

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