BLV32F NPN Transistor

The BLV32F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLV32F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLV32F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLV32F transistor as follows.

BLV32F Transistor Specification

Transistor Code		BLV32F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		XM5
Collector Power Dissipation (Maximum)	PC	82W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	2000MHz
Collector Capacitance	CC	60pF

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