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BLV30 NPN Transistor

The BLV30 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLV30 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLV30 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLV30 transistor as follows.

Circuit diagram symbol of the BLV30 transistor

BLV30 Transistor Specification

Transistor Code BLV30
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO128
Collector Power Dissipation (Maximum) PC 32W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 1200MHz
Collector Capacitance CC 18pF

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