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BLD155DL NPN Transistor

The BLD155DL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD155DL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD155DL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD155DL transistor as follows.

Circuit diagram symbol of the BLD155DL transistor

BLD155DL Transistor Specification

Transistor Code BLD155DL
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220 TO220S
Collector Power Dissipation (Maximum) PC 70W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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