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BLD137DL NPN Transistor

The BLD137DL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD137DL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD137DL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD137DL transistor as follows.

Circuit diagram symbol of the BLD137DL transistor

BLD137DL Transistor Specification

Transistor Code BLD137DL
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220 TO220S
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO220_TO220S Package

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