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BLD137D NPN Transistor

The BLD137D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD137D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD137D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD137D transistor as follows.

Circuit diagram symbol of the BLD137D transistor

BLD137D Transistor Specification

Transistor Code BLD137D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220 TO220S
Collector Power Dissipation (Maximum) PC 90W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO220_TO220S Package

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