The BLD135DH is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD135DH transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The BLD135DH transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the BLD135DH transistor as follows.
| Transistor Code | BLD135DH | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TO251 TO251S TO252 | |
| Collector Power Dissipation (Maximum) | PC | 1.3W |
| Collector-Base Voltage (Maximum) | VCB | 850V |
| Collector-Emitter Voltage (Maximum) | VCE | 450V |
| Collector Current (Maximum) | IC | 4A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 9V |
| Forward Current Transfer Ratio (hFE Value) | 20 | |
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