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BLD135D NPN Transistor

The BLD135D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD135D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD135D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD135D transistor as follows.

Circuit diagram symbol of the BLD135D transistor

BLD135D Transistor Specification

Transistor Code BLD135D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220 TO220S SOT82 SOT82S TO12
Collector Power Dissipation (Maximum) PC 55W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 3.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO220_TO220S_SOT82_SOT82S_TO12 Package