The BLD135D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD135D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The BLD135D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the BLD135D transistor as follows.
Transistor Code | BLD135D | |
---|---|---|
Transistor Type | BJT | |
Transistor Polarity | NPN | |
Transistor Material | Silicon(SI) | |
Package | TO220 TO220S SOT82 SOT82S TO12 | |
Collector Power Dissipation (Maximum) | PC | 55W |
Collector-Base Voltage (Maximum) | VCB | 700V |
Collector-Emitter Voltage (Maximum) | VCE | 400V |
Collector Current (Maximum) | IC | 3.5A |
Operating Junction Temperature (Maximum) | TJ | 150°C |
Emitter-Base Voltage (Maximum) | VEB | 9V |
Forward Current Transfer Ratio (hFE Value) | 10 |
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