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BLD132D NPN Transistor

The BLD132D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD132D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD132D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD132D transistor as follows.

Circuit diagram symbol of the BLD132D transistor

BLD132D Transistor Specification

Transistor Code BLD132D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126 TO126S TO251 TO251S TO25
Collector Power Dissipation (Maximum) PC 28W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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