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BLD128D NPN Transistor

The BLD128D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD128D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD128D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD128D transistor as follows.

Circuit diagram symbol of the BLD128D transistor

BLD128D Transistor Specification

Transistor Code BLD128D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220 TO220S TO220FP TO251 TO2
Collector Power Dissipation (Maximum) PC 75W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO220_TO220S_TO220FP_TO251_TO2 Package