The BLD123D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD123D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The BLD123D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the BLD123D transistor as follows.
| Transistor Code | BLD123D | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TO220 TO220S TO126 TO126S TO25 | |
| Collector Power Dissipation (Maximum) | PC | 40W |
| Collector-Base Voltage (Maximum) | VCB | 600V |
| Collector-Emitter Voltage (Maximum) | VCE | 400V |
| Collector Current (Maximum) | IC | 2A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 9V |
| Forward Current Transfer Ratio (hFE Value) | 10 | |
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BLD133DL NPN Transistor
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