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BLD122DL NPN Transistor

The BLD122DL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD122DL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD122DL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD122DL transistor as follows.

Circuit diagram symbol of the BLD122DL transistor

BLD122DL Transistor Specification

Transistor Code BLD122DL
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126 TO126S TO92 TO92S
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO126_TO126S_TO92_TO92S Package

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