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BLD112D NPN Transistor

The BLD112D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD112D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD112D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD112D transistor as follows.

Circuit diagram symbol of the BLD112D transistor

BLD112D Transistor Specification

Transistor Code BLD112D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126 TO126S TO92 TO92S
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO126_TO126S_TO92_TO92S Package

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