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BLD101D NPN Transistor

The BLD101D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BLD101D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BLD101D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BLD101D transistor as follows.

Circuit diagram symbol of the BLD101D transistor

BLD101D Transistor Specification

Transistor Code BLD101D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92 TO92S
Collector Power Dissipation (Maximum) PC 7W
Collector-Base Voltage (Maximum) VCB 500V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO92_TO92S Package

BUL6821 BUL6821 NPN Transistor MJE13001AH MJE13001AH NPN Transistor BLD102D BLD102D NPN Transistor A562 A562 PNP Transistor BUL6823A BUL6823A NPN Transistor MJE13001H MJE13001H NPN Transistor BUL6822 BUL6822 NPN Transistor BUL6823 BUL6823 NPN Transistor BUL6822A BUL6822A NPN Transistor