BFY50E NPN Transistor

The BFY50E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFY50E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFY50E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFY50E transistor as follows.

BFY50E Transistor Specification

Transistor Code		BFY50E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		44
Transition Frequency	FT	60MHz
Collector Capacitance	CC	12pF

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