BFX56I NPN Transistor

The BFX56I is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFX56I transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFX56I transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFX56I transistor as follows.

BFX56I Transistor Specification

Transistor Code		BFX56I
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	2.6W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		66
Transition Frequency	FT	350MHz
Collector Capacitance	CC	3.5pF

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