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BFV85E NPN Transistor

The BFV85E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFV85E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFV85E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFV85E transistor as follows.

Circuit diagram symbol of the BFV85E transistor

BFV85E Transistor Specification

Transistor Code BFV85E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO51
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 30MHz
Collector Capacitance CC 8pF

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More Transistors Datasheets in TO51 Package

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