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BFV55 NPN Transistor

The BFV55 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFV55 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFV55 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFV55 transistor as follows.

Circuit diagram symbol of the BFV55 transistor

BFV55 Transistor Specification

Transistor Code BFV55
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO122
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 75V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 175MHz
Collector Capacitance CC 12pF

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More Transistors Datasheets in TO122 Package

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