BFU580Q NPN Transistor

The BFU580Q is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFU580Q transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFU580Q transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFU580Q transistor as follows.

BFU580Q Transistor Specification

Transistor Code		BFU580Q
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		S58
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	24V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	11000MHz
Collector Capacitance	CC	1.1pF

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